Method for producing image pickup apparatus and method for producing semiconductor apparatus

ABSTRACT

A method for producing an image pickup apparatus includes: a process of cutting an image pickup chip substrate where electrode pads are formed around each of the light receiving sections to fabricate image pickup chips; a process of bonding image pickup chips determined as non-defective products to a glass wafer to fabricate a joined wafer; a process of filling a sealing member among the image pickup chips on the joined wafer; a machining process including a thinning a thickness of the joined wafer to flatten a machining surface and a forming through-hole interconnections, each of which is connected to each of the electrode pads; a process of forming a plurality of external connection electrodes, each of which is connected to each of the electrode pads via each of the through-hole interconnections; and a process of cutting the joined wafer.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation application of PCT/JP2013/060343filed on Apr. 4, 2013 and claims benefit of Japanese Application No.2012-123223 filed in Japan on May 30, 2012, the entire contents of whichare incorporated herein by this reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for producing an image pickupapparatus and a method for producing a semiconductor apparatus, themethods including a process of cutting a joined wafer where a pluralityof image pickup chips (semiconductor chips) are bonded to a supportsubstrate.

2. Description of the Related Art

A chip size package (CSP) method has been used for downsizingsemiconductor apparatuses. In the CSP method, in a semiconductor chipwhere a semiconductor circuit section is formed on a first main face, athrough-hole interconnection is formed up to a second main face, and anexternal connection terminal on the second main face is connected to aninterconnection board.

Here, in a small image pickup apparatus, a transparent support memberthat protects a light receiving section that is the semiconductorcircuit section is joined to a first main face of an image pickup chipon which the light receiving section is formed. A wafer level chip sizepackage (WL-CSP) method has been used for collectively fabricating aplurality of image pickup apparatuses. In the WL-CSP method, an imagepickup chip substrate on which a plurality of light receiving sectionsare formed, and a transparent support substrate are subjected tomachining such as formation of through-hole interconnections in a joinedwafer state in which the image pickup chip substrate and the transparentsupport substrate are bonded via an adhesive layer. After that, thejoined wafer is individualized into individual image pickup apparatuses.

Note that Japanese Patent Application Laid-Open Publication No.2011-243596 discloses a method for producing a package component by aCSP method in which semiconductor chips mounted on a mounting face of asilicon wafer are sealed by a sealing resin, and the silicon wafer isthen polished or the like from an opposite face to the mounting face,and further individualized into individual package components.

That is, in the above production method, the semiconductor chips are notmachined, but the silicon wafer is machined to become an interposer forthe semiconductor chips.

SUMMARY OF THE INVENTION

A method for producing an image pickup apparatus of an embodiment of thepresent invention includes: a process of cutting an image pickup chipsubstrate where a plurality of light receiving sections are formed on afirst main face and electrode pads are formed around each of the lightreceiving sections to fabricate a plurality of image pickup chips; aprocess of bonding the first main face of each of the image pickup chipsdetermined as non-defective products to a transparent support substratedifferent from the image pickup chip substrate in at least either sizeor shape via a transparent adhesive layer to fabricate a joined wafer; aprocess of filling a sealing member among the plurality of image pickupchips bonded to the joined wafer; a machining process including aprocess of machining the joined wafer to thin a thickness of the joinedwafer, from a second main face side to flatten a machining surface and aprocess of forming through-hole interconnections, each of which isconnected to each of the electrode pads; a process of forming aplurality of external connection electrodes, each of which is connectedto each of the electrode pads via each of the through-holeinterconnections, on the second main face; and a process of cutting andindividualizing the joined wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of an image pickup apparatus of anembodiment;

FIG. 2 is a perspective view for explaining a method for producing theimage pickup apparatus of the embodiment;

FIG. 3 is a flowchart for explaining the method for producing the imagepickup apparatus of the embodiment;

FIG. 4 is a plan view and a partially enlarged view of a transparentsubstrate of the image pickup apparatus of the embodiment;

FIG. 5 is a perspective view of an image pickup chip of the image pickupapparatus of the embodiment;

FIG. 6A is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6B is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6C is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6D is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6E is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6F is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 6G is a sectional view for explaining the method for producing theimage pickup apparatus of the embodiment;

FIG. 7 is a partially enlarged view of a transparent substrate of animage pickup apparatus of Modification 1;

FIG. 8 is a plan view for explaining a method for producing an imagepickup apparatus of Modification 2;

FIG. 9A is a plan view for explaining a method for producing an imagepickup apparatus of Modification 3;

FIG. 9B is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 3;

FIG. 10A is a plan view for explaining a method for producing an imagepickup apparatus of Modification 4;

FIG. 10B is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 4;

FIG. 11A is a sectional view for explaining a method for producing animage pickup apparatus of Modification 5;

FIG. 11B is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 5;

FIG. 11C is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 5;

FIG. 11D is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 5;

FIG. 11E is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 5;

FIG. 11F is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 5;

FIG. 12A is a sectional view for explaining a method for producing animage pickup apparatus of Modification 6;

FIG. 12B is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 6;

FIG. 12C is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 6; and

FIG. 12D is a sectional view for explaining the method for producing theimage pickup apparatus of Modification 6.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Embodiment

As shown in FIG. 1, in an image pickup apparatus 10 that is asemiconductor apparatus, an image pickup chip (imager chip) 30, and acover glass 20 that is a support substrate section (transparent flatplate section) are bonded via an adhesive layer 41 made of a transparentresin. A light receiving section 31 that is a semiconductor circuitsection is formed on a first main face 30SA of the image pickup chip 30,and a plurality of electrode pads 32 connected to the light receivingsection 31 by an interconnection (not shown) are further formed aroundthe light receiving section 31 of the first main face 30SA. Theelectrode pad 32 is connected to an external connection electrode 34 andan external connection terminal 35 on a second main face 30SB via athrough-hole interconnection 33. That is, the plurality of electrodepads 32 supply electricity to the light receiving section 31, andtransmit and receive input and output signals to and from the lightreceiving section 31. Moreover, outer peripheral portions of the imagepickup chip 30 and outer peripheral portions of the adhesive layer 41are covered with a sealing member 42 with no gap therebetween.

That is, in the image pickup apparatus 10, a plan-view dimension of thecover glass 20 is larger than a plan-view dimension of the image pickupchip 30. This is because the image pickup apparatus 10 is fabricated bycutting (individualizing) a joined wafer 40W where a plurality of imagepickup chips 30 are bonded to a glass wafer 20W, which is a transparentsupport substrate that becomes the cover glass 20, away from each otherby a predetermined length via the adhesive layer 41 as shown in FIG. 2.As described below, on the glass wafer 20W, an alignment mark 21 forarranging each of the image pickup chips 30 at a predetermined positionis formed. That is, since the glass wafer 20W is transparent, thealignment mark (first alignment mark) 21 and an alignment mark (secondalignment mark) 36 (see FIG. 5) on the image pickup chip 30 can bealigned with each other from an opposite face to a face where thealignment mark 21 is formed.

Next, a method for producing the image pickup apparatus 10 of theembodiment is described in detail based on a flowchart in FIG. 3.

<Step 10> Glass Wafer Fabricating Process

As shown in FIG. 4, the alignment marks 21 for arranging the imagepickup chips 30 at predetermined positions are formed on the glass wafer20W that is the transparent support substrate. Note that an image pickupchip arrangement region 30S is indicated by a broken line for the sakeof description in FIG. 4. The glass wafer 20W that is cut to become thecover glass 20 only needs to be transparent in a wavelength band oflight for image pickup. For example, borosilicate glass, quartz glass,or single crystal sapphire is used.

Note that alignment marks 22 and alignment marks 23 are formed at thesame time as formation of the alignment marks 21. The alignment marks 22are used for dicing at a time of individualization, and the alignmentmarks 23 are used for machining such as formation of the through-holeinterconnection 33 in the image pickup chip 30. The alignment marks 21and the like are formed by, for example, performing patterning byphotolithography after forming a metal layer of Al or the like on anentire face. It is preferable that two alignment marks be provided forone time of positioning processing for the respective alignment marks soas to perform accurate positioning. Note that the alignment marks 21 andthe like may be also formed by partially etching the glass wafer 20W.

Note that a back face of the glass wafer 20W (the opposite face to theface where the alignment marks 21 are formed), which is not machined infollowing processes, may be covered with a photoresist or the like to beprotected.

<Step 11> Image Pickup Chip Fabricating Process

The plurality of light receiving sections 31 that are the semiconductorcircuit sections, the plurality of electrode pads 32 connected to eachof the light receiving sections 31, and the plurality of alignment marks36 are formed on the first main face 30SA of a semiconductor wafer suchas a silicon wafer by a known semiconductor process, so that an imagepickup chip substrate 30W (see FIG. 2) is fabricated. By cutting theimage pickup chip substrate (semiconductor chip substrate) 30W, theplurality of image pickup chips (semiconductor chips) 30 shown in FIG. 5are fabricated.

Sizes of the image pickup chip substrate and the glass wafer 20W areselected according to available production equipment or the likedepending on a form and specifications etc. of the image pickupapparatus to be produced. Also, the image pickup chip substrate and theglass wafer 20W may be set to be in different sizes. For example, evenwhen the image pickup chips are formed from a substrate having a largediameter of 12-inch (300-mm) φ, or from a still larger substrate, theindividualized image pickup chips 30 are re-arrayed (bonded) on theglass wafer 20W of 8-inch (200-mm) φ, and subjected to machining.Accordingly, it becomes possible to produce the image pickup apparatusby equipment for 8-inch (200-mm) φ without using equipment or the likecompatible with a large-diameter wafer. Moreover, a substrate and awafer of different shapes, for example, the image pickup chip substrateof 8-inch (200-mm) φ and the glass wafer 20W of 6-inch (150-mm) squares,may be also used depending on equipment and apparatuses, etc. Asdescribed above, since the image pickup chip substrate and the glasswafer 20W of suitable sizes or shapes for available production equipmentor the like (a production apparatus, a jig and a tool, etc.) can beused, the image pickup apparatus can be produced by effectivelyutilizing existing equipment or the like.

In following processes, only the image pickup chips 30 determined asnon-defective products in an inspection process are used. That is,“defective chips” other than the non-defective products are not used inthe following processes. Thus, even when a yield rate of the imagepickup chips 30 of the image pickup chip substrate 30W is low, adecrease in yield rate of the image pickup chips obtained by re-arrayingand re-machining the image pickup chips is not caused. Note that it ispreferable to perform an inspection for determining defectiveness of theimage pickup chips on the image pickup chips 30 in a state of the imagepickup chip substrate 30W in view of work efficiency although theinspection may be performed on each of the individual image pickup chips30 in an individualized state.

The alignment marks 36 correspond to the alignment marks 21 on the glasswafer 20W. As shown in FIG. 5, the alignment marks 36 are preferablyformed respectively on outer peripheral portions facing each other witha center of the image pickup chip 30 therebetween. By previously formingthe alignment marks on the glass wafer 20W and the image pickup chip 30,the image pickup chip 30 can be automatically placed with high precisionby using a mounting apparatus.

Also, a step portion 37 is formed in the outer peripheral portions ofthe first main face 30SA of the image pickup chip 30. The step portion37 is fabricated by dicing the image pickup chip substrate 30W by stepcutting. The image pickup chip 30 with the step portion 37 can reduce alength L with an adjacent chip so as to prevent spread (a fillet) of anadhesive 41L to an outer side of the image pickup chip 30 when bonded tothe glass wafer 20W. A micro lens group may be also disposed on thelight receiving section 31.

<Step S12> Bonding Process

As shown in FIG. 6A, the plurality of image pickup chips 30 are bondedto the glass wafer 20W away from each other by the predetermined lengthL to fabricate the joined wafer 40W. That is, the plurality of imagepickup chips 30 formed on the image pickup chip substrate 30W onpredetermined array conditions are then re-arrayed on the glass wafer20W after cutting.

The length L needs to be longer than a thickness of a dicing blade usedin a dicing process described below. However, if the length L is toolong, the number of image pickup apparatuses that can be fabricated fromthe single glass wafer 20W is decreased. At a same time, the sealingmember has a larger volume in a sealing member filling process describedbelow, and a curing shrinkage stress becomes larger, so that a crack iseasily generated. Therefore, the length L is preferably 15 μm or moreand 500 μm or less, which is slightly longer than the thickness of thedicing blade.

Also, by setting the length L to a constant value among all of the imagepickup chips 30, workability can be improved, and uniform filling of thesealing member is enabled in the sealing member filling processdescribed below. The crack caused by unevenness of the curing shrinkagestress can be thereby prevented.

For example, the adhesive 41L in a liquid form is first applied in anappropriate amount to five positions of the image pickup chiparrangement region 30S of the glass wafer 20W. The image pickup chiparrangement region 30S can be grasped by the two alignment marks 21arranged on a diagonal line. For example, a dispensing method of pushingout a solution from a distal-end nozzle of a dispenser and applying thesolution is used as an application method.

As the adhesive 41L, a BCB (benzocyclobutene) resin, an epoxy-basedresin, or a silicone-based resin etc., which satisfies such propertiesthat the adhesive has high transparency (for example, a transmittance atvisible wavelengths is 90% or more), has high adhesive strength, and isnot deteriorated by heat or the like in subsequent processes, is used.

The image pickup chip 30 is then bonded to the glass wafer 20W in astate in which the first alignment marks 21 on the glass wafer 20W andthe second alignment marks 36 on the first main face 30SA of the imagepickup chip 30 are aligned with each other by using, for example, a flipchip bonder. The first alignment marks 21 and the second alignment marks36 are set so as to be easily aligned with each other. For example, thefirst alignment mark 21 has a cross shape as shown in FIG. 4, and thesecond alignment mark 36 is composed of four squares as shown in FIG. 5.

Note that a reference mark may be previously formed on the glass wafer20W without forming the alignment marks exclusive for the respectiveimage pickup chips, and the image pickup chips 30 may be arranged at apredetermined pitch based on the reference mark. A throughput can beraised by using the above method. Also, alignment may be performed byusing a pattern of the electrode pads 32 or the like formed on the imagepickup chip 30 instead of the second alignment marks 36.

The liquid adhesive 41L is cured in a state in which the alignment marksare aligned with each other, and becomes the adhesive layer 41. Bycompletely curing the liquid adhesive 41L while pressing the second mainface of the image pickup chip at a predetermined pressure by awafer-shaped pressing jig, parallelism between the main face of theimage pickup chip and the main face of the glass wafer 20W is increased.

As a method for curing the adhesive 41L, any of a thermal curing method,a UV curing method, the UV curing method+the thermal curing method, theUV curing method+a moisture curing method, and a room temperature curingmethod etc. may be employed depending on the resin as long as desiredproperties are satisfied. By using a flip chip bonder including meansfor curing the adhesive 41L, such as a heating section or an UVirradiation section, the arrangement of the image pickup chip 30 at apredetermined position, and the curing of the adhesive 41L can beperformed at a same time.

Note that attention needs to be paid when the adhesive 41L where voidsare easily generated by rapid curing is used although the adhesive 41Lmay be completely cured by the flip chip bonder. In this case, it ispreferable that, for example, when the adhesive 41L is cured by the flipchip bonder, the adhesive 41L is semi-cured to an extent where the imagepickup chip 30 disposed at a predetermined position does not move tocause displacement, and after the plurality of image pickup chips 30 aredisposed on the glass wafer 20W, the adhesive 41L is completely cured ata time and formed into the adhesive layer 41.

<Step S13> Sealing Member Filling Process

As shown in FIG. 6B, a sealing resin 42L in a liquid form that is filledinto a gap between the plurality of image pickup chips 30 disposed onthe glass wafer 20W by, for example, a dispensing method is cured tobecome the sealing member 42. The sealing resin 42L may be also pouredinto the gap instead of the dispensing method.

By setting the arrangement length L between the plurality of imagepickup chips 30 to 15 μm or more and 500 μm or less, the sealing membercan be filled into the gap between the plurality of image pickup chips30 by a capillary tube phenomenon. Note that a region where vertexes ofthe plurality of image pickup chips 30 face each other tends to have asmall height (thickness) when filled with the sealing resin 42L.Therefore, after the sealing resin is cured once, the sealing resin maybe applied again only to the portion where the vertexes of the pluralityof image pickup chips 30 face each other.

The sealing member 42 preferably has a low moisture vapor transmissionrate so as to improve humidity resistance of the image pickup apparatus10, and is difficult to deteriorate by heat or plasma in subsequentprocesses. For example, a BCB resin or polyimide is used. Note that thesealing member 42 may be made of the same material as or a differentmaterial from the adhesive layer 41.

Also, the sealing member 42 preferably has a function as a lightshielding member that prevents entrance of external light into the lightreceiving section. To this end, even when the sealing member 42 is madeof the same resin as the adhesive layer 41, the resin is preferably usedby mixing a light shielding material such as a dye or a black pigmenttherein. Note that a non-conductive material is used when the pigment orthe like is used since the sealing member 42 needs to be an insulator.

A thickness of the sealing member 42, namely, a height of the fillingonly needs to be larger than a thickness of the image pickup chip 30after thinning in step S14. That is, it is not necessary to completelyfill the space between the plurality of image pickup chips 30 with thesealing member 42 before the thinning machining Conversely, the sealingmember 42 may protrude from the space between the image pickup chips 30.

Note that it is preferable not to perform rapid heating or rapid coolingin the curing of the sealing resin 42L in order to prevent the crackoccurrence due to the shrinkage stress when the sealing resin 42L iscured. Also, it is preferable that the sealing resin 42L be defoamed invacuum before curing, or is cured in vacuum in order to prevent theoccurrence of voids.

Note that the sealing member 42 is not limited to the cured liquidresin. For example, a sheet-like resin member may be cured after fillingthe space between the image pickup chips 30 wile embedding the imagepickup chips 30 by vacuum hot pressing or vacuum laminating.

<Step S14> Image Pickup Chip Machining Process

As shown in FIG. 6C, the joined wafer 40W is thinned, so that the secondmain face 30SB side of the image pickup chip 30 is flattened. That is, aback grinding process and a CMP (chemical mechanical polishing) processare performed from the second main face 30SB side, and a machiningsurface is flattened.

In the back grinding process, a diamond wheel called a back grindingwheel is used. The CMP process is performed for reducing surfaceroughness of a surface grinded in the back grinding process.

Note that when a surface of the joined wafer 40W has largeirregularities after being filled with the sealing member, preprocessingby another means is preferably performed before the back grindingprocess. For example, as the preprocessing, the sealing member 42protruding from the gap between the image pickup chips 30 is shaved by ablade.

Note that dishing, which forms a recess in a center portion of thesurface of the sealing member 42, may occur by the back grinding processand the CMP process. However, since the recessed portion is removed inthe dicing process, there occurs no problem.

The second main face 30SB of the image pickup chip 30 and the surface ofthe sealing member 42 on the joined wafer 40W after thinning machiningform a flat face. For the joined wafer 40W in which the machiningsurface has been flattened, a similar process to that of a normalsemiconductor wafer can be performed unlike a wafer having an unevensurface.

That is, as shown in FIG. 6D, a through-hole via 33S for forming thethrough-hole interconnection 33 that is connected to the electrode pad32 formed on the first main face 30SA of the image pickup chip 30 isformed by the normal semiconductor wafer process. To form thethrough-hole via, an etching mask 39 having an opening in a regionimmediately above each of the electrode pads 32 is formed on the imagepickup chips 30 and the sealing member 42. The etching mask also servesas a protective layer for protecting the image pickup chips 30 and thesealing member 42 from chemicals and plasma used in a subsequentprocess. For example, the silicon oxide film or the silicon nitride filmis used as the etching mask 39. Since the film formation can beperformed at low temperature as the method for forming the etching mask39, and no damage is caused on the semiconductor circuit section or thelike formed on the image pickup chip 30, plasma CVD is preferably used.

Note that the alignment marks 23 for forming the through-holeinterconnection, which are previously formed on the glass wafer 20W, areused for alignment of a photo mask used when a patterning mask (notshown) for forming the opening in the etching mask 39 is formed.

The through-hole via 33S reaching the electrode pad 32 is formed by wetetching using an alkali solution such as KOH or TMAH, or dry etching byan ICP-RIE method or the like. Note that the through-hole via 33S may bealso formed by a physical machining method such as laser machining.

As shown in FIG. 6E, the through-hole interconnection 33 composed of aconductor is formed in an inner portion of the through-hole via 33Safter an insulating layer (not shown) is formed on a wall face etc. ofthe through-hole via 33S. Then, after the etching mask 39 is removed,the external connection electrode 34 connected to the through-holeinterconnection 33 is formed on the second main face 30SB of the imagepickup chip 30. Furthermore, the projecting external connection terminal35 is disposed on the external connection electrode 34.

Note that a plating process may be used in the through-holeinterconnection forming process, and a solder ball etc. may be used asthe external connection terminal 35.

<Step S15> Individualizing Process (Dicing Process)

A plurality of image pickup apparatuses 10 are fabricated from thesingle joined wafer 40W by an individualizing process of cutting thejoined wafer 40W.

For cutting, a two-stage dicing method shown in FIGS. 6F and 6G ispreferable. That is, after the joined wafer 40W is half-cut to about 10to 200 μm from a surface of the glass wafer 20W (an upper side in thedrawings), the glass wafer 20W is subjected to full-cut dicing, so thata crack occurrence due to a stress and stripping of the sealing member42 can be prevented. Moreover, in the two-stage dicing method, a bladetype (a bond material, an abrasive grain diameter, a degree ofconcentration) and machining conditions (a feed speed, a rotation speed)suitable for resin are used for dicing the sealing member 42, and ablade type and machining conditions suitable for glass are used fordicing the glass wafer 20W. A machining quality (resin burrs, chippingof glass, and delamination of a resin layer) can be thereby improved.Also, step cutting by which a step is formed in end portions of theindividualized image pickup chips 30 may be performed by setting theblade for resin to a larger thickness than the blade for glass.

Also, the glass wafer 20W may be subjected to full-cut dicing by bladedicing for glass or laser dicing, and thereby individualized afterremoving the sealing member 42 on a dicing line by laser dicing oretching.

In alignment of dicing, the alignment marks 22 firstly formed on theglass wafer 20W are used. Note that, instead of the alignment marks 22,an alignment mark for dicing may be formed on the second main face 30SBof the image pickup chip 30 or on the sealing resin between the imagepickup chips 30 in the through-hole interconnection forming process orthe like.

In the production method of the embodiment, even when the image pickupchip substrate 30W has a low yield rate of image pickup devices, thejoined wafer 40W is fabricated by using only the non-defective imagepickup chips 30. Therefore, the defective chip is not produced into theimage pickup apparatus, so that the image pickup apparatus 10 can beproduced at low cost, and productivity is high.

Also, in the production method of the embodiment, the image pickupapparatus can be produced by using the joined wafer 40W with apredetermined diameter regardless of the diameter of the image pickupchip substrate 30W. Since machining equipment compatible with a largediameter is unrequired, productivity is high.

Moreover, since the image pickup chip with a large thickness beforebeing machined is bonded to the glass wafer 20W, the image pickup chipis easily handled. That is, the image pickup chip that is thinned forforming the through-hole interconnection is easily damaged, and easilydeformed by a stress during bonding or the like. However, in theproduction method of the embodiment, the image pickup chip in a thickstate can be bonded to the glass wafer 20W.

Also, since the support substrate is the transparent glass wafer 20W,alignment using the alignment marks can be performed from the oppositeface to the image pickup chip bonded face as shown in FIG. 2.

Also, since the chip arrangement length is set to a constant value, itis easy to fill the sealing resin 42L, thereby preventing the crack inthe sealing resin 42L. Thus, a production yield rate is high.

The image pickup chip 30 and the sealing member 42 can be treated as asingle wafer by making the outer face of the image pickup chip 30 andthe outer face of the sealing member 42 flush with each other by theCMP. Thus, the semiconductor wafer process can be performed on achip-shaped component, and high-precision and high-density machining canbe performed.

The image pickup apparatus 10 includes the image pickup chip 30 that isthe semiconductor chip where the light receiving section 31 that is thesemiconductor circuit section is formed on the first main face 30SA, thecover glass 20 that is the support substrate section having a largerplan-view dimension than the image pickup chip 30, the transparentadhesive layer 41 that bonds the first main face 30SA of the imagepickup chip 30 and the image pickup chip 30, and the sealing member 42that covers a side face of the image pickup chip 30 and a side face ofthe adhesive layer 41, and is made of an insulating material having asame outer dimension (plan-view dimension) as the cover glass 20.

That is, the side face of the image pickup chip 30 is covered with thesealing member 42, and the image pickup chip 30 is not exposed outside.Therefore, the image pickup apparatus 10 has excellent electricalinsulating properties and humidity resistance.

Note that a functional member may be further added to the image pickupapparatus 10 of the above embodiment. For example, an objective lensunit may be joined to the opposite face to the face of the glass wafer20W where the image pickup chip 30 is bonded in alignment with the imagepickup chip 30. Also, a digital signal processor (DSP) chip forprocessing an image pickup signal may be joined to the second main face30SB of the image pickup chip 30.

A backside irradiation-type image pickup apparatus may be also producedthrough processes of bonding an interconnection layer side of the imagepickup chip 30 to the support substrate, filling the sealing resin intothe gap between the image pickup chips 30, thinning the image pickupchip 30 to about 3 μm to expose the light receiving section 31,thereafter forming a color filter and a micro lens on the lightreceiving section 31, and removing a silicon layer on the electrode toexpose the electrode.

Also, the semiconductor chip is not limited to the image pickup chip,and any type, such as general semiconductor chips, various sensors oractuators, may be employed. The semiconductor apparatus to be producedis also not limited to the image pickup apparatus.

<Modifications>

Next, methods for producing image pickup apparatuses 10A to 10F ofModifications 1 to 6 of the embodiment of the present invention aredescribed. Since the methods for producing the image pickup apparatuses10A to 10F are similar to the method for producing the image pickupapparatus 10 and have the same effects, the same constituent elementsare assigned the same reference numerals, and description thereof isomitted.

<Modification 1>

The method for producing the image pickup apparatus 10A of Modification1 is characterized in alignment marks and the like formed on the glasswafer 20W. As shown in FIG. 7, when the alignment marks 21 are formed,displacement evaluation marks 24, adhesive fillet evaluation marks 25and a light shielding film 27 are formed at the same time.

An amount of displacement of the image pickup chips 30 can be measuredfrom an opposite face of the glass wafer 20W by the displacementevaluation marks 24. If the amount of displacement is large, positionadjustment can be performed to reduce the defectiveness. It is alsopossible to measure an amount of spread of the adhesive 41L protrudingfrom a bonding face, that is, a portion referred to as a so-calledfillet, by the adhesive fillet evaluation marks 25. In a case of excessor deficiency of the spread of the fillet, an amount of adhesive to besupplied can be adjusted to reduce the defectiveness. The lightshielding film 27 prevents entrance of unnecessary light to the imagepickup chips 30.

Note that the image pickup apparatus 10A only needs to have any of themarks 24, the marks 25 and the light shielding film 27 according to itsspecifications and the like.

<Modification 2>

In the method for producing the image pickup apparatus 10B ofModification 2, as shown in FIG. 8, plural kinds of image pickup chips30B1, 30B2 and 30B3 having different chip sizes (plan view dimensionsand thicknesses) are bonded to the one glass wafer 20W, and plural kindsof image pickup apparatuses 10B are fabricated from one joined wafer40WB. Otherwise, plural kinds of image pickup chips with a same size anddifferent pixel sizes etc. may be bonded to the single glass wafer 20Wto fabricate plural kinds of image pickup apparatuses 10B. Since theproduction method of Modification 2 makes it possible to collectivelyproduce diversified models of image pickup apparatuses 10B from thesingle joined wafer 40WB, the method is suitable for diversifiedsmall-quantity production.

Note that, in a case of bonding chips with different sizes to the singleglass wafer 20W, the dicing process can be performed easily bycollectively disposing image pickup chips with the same size in apredetermined region.

Note that, in the case of bonding chips with different sizes to thesingle glass wafer 20W also, it is preferable that the displacementlength L between the image pickup chips be a constant value. This is forthe purpose of improving workability in the filling process. Also, sincethe sealing resin 42L can be uniformly filled, it is possible to preventcrack occurrence on the sealing member 42 due to uneven stress.

Note that, by changing the kind of the adhesive 41L for each kind of theimage pickup chip 30, it is possible to change a refractive index of theadhesive layer 41 according to a refractive index of microlens materialor use either high-reliability adhesive or low-reliability butinexpensive adhesive etc. according to a required reliability level.

Furthermore, function chips other than image pickup chips may be bondedto the glass wafer 20W. As examples of the function chip, a processevaluation chip, a DSP chip having functions required for outputting animage from the image pickup chip 30 and the like can be given.

The process evaluation chip is given, for example, a function ofevaluating an amount of etching for a through-hole via, an amount ofetching for an oxide film, interconnection resistance, interconnectioncapacity, interconnection inductance or plasma damage.

By connecting the DSP chip and the image pickup chip 30, which arebonded to the glass wafer 20W adjoining each other, via interconnection,image output evaluation of the image pickup chip 30 can be performed ina wafer state.

Note that dummy chips 30B1D, 30B2D and 30B3D are arranged on the outerperipheral portion of the joined wafer 40WB. Since the volume of thesealing resin 42L on the outer peripheral portion of the wafer isreduced by arranging the dummy chip 30B1D etc., crack occurrence can beprevented.

Furthermore, successive projecting portions (dam) 49 made of resin areformed on a most outer periphery of the joined wafer 40WB, for example,by the dispensing method. Therefore, it does not happen that liquidresin, which is to be a sealing member, protrudes outside the coverglass 20WB or flows to a back face.

A position where an opening of the etching mask of the through-hole via33S is to be formed is immediately under the electrode pads 32 of theimage pickup chip 30. When different kinds of image pickup chips 30 arearranged on the glass wafer, the size, position and pitch of thethrough-hole via 33S are designed according to the size, position andpitch of the electrode pad 32 of each image pickup chip 30.

When the image pickup chips 30 having different depths from back facesthereof to back faces of the electrode pads mixedly exist, it isdesirable that the opening of the protective layer (the etching mask 39)provided for such image pickup chips 30 that the depth to the back faceof the pad is short is designed small so that the through-hole via 33Swith a desired size can be obtained according to horizontal-directionspread at a time of etching.

When different kinds of image pickup chips 30 are arranged in the wafer,a different inspection is performed for each image pickup chip 30 withthe use of a probe card corresponding to the image pickup chip 30.

<Modification 3>

As shown in FIGS. 9A and 9B, in the method for producing the imagepickup apparatus 10C of Modification 3, an adhesive 41LC disposed on aglass wafer 20WC is patterned to be in substantially the same shape asthe image pickup chip arrangement region 30S. For example, the adhesive41LC is patterned by photolithography after application of aphotosensitive resin. As for the application, a liquid adhesive may bespin-coated, or a film-type adhesive may be laminated. Then, the imagepickup chips 30 are bonded to the glass wafer 20WC via the patternedadhesive 41LC by thermocompression bonding, and the joined wafer 40WCbonded via an adhesive layer 41C is fabricated.

The production method of Modification 3 makes it possible to performproduction in a shorter time period than a production method in which anadhesive is arranged at each of a lot of positions corresponding to therespective image pickup chips 30 before placing the image pickup chipsat the positions. Since the adhesive 41LC does not exist among the imagepickup chips 30, heat is not easily transmitted in a horizontaldirection accordingly, and it does not happen that, at a time of thermalcuring of the image pickup chip 30, the uncured adhesive 41LC ofadjoining image pickup chips are cured.

Note that a region where vertexes of the image pickup chips 30 face eachother tends to have a small height (thickness) when filled with thesealing resin 42L. Therefore, it is preferable that post patterns 41CPby the patterned adhesive 41LC be disposed as shown in FIG. 9A.

A dam for preventing the sealing resin from flowing out may be formed onthe outer peripheral portion of the wafer by patterning the adhesive40LC. Alignment marks for positioning with the image pickup chips may beformed by patterning the adhesive 40LC.

<Modification 4>

As shown in FIGS. 10A and 10B, in the method for producing the imagepickup apparatus 10D of Modification 4, an adhesive 41LD disposed on aglass wafer 20WD is patterned to be in a frame shape. That is, theadhesive 41LD is in a frame shape with a width between 25 μm and 50 μmalong the outer peripheral portion of the light receiving section.Therefore, in the image pickup apparatus 10D, the light receivingsection 31 on which a microlens (not shown) is disposed is in contactwith a cavity (cavity portion) 38.

Since an outer peripheral interface of the microlens on the lightreceiving section 31 is in contact with the cavity 38 with a refractiveindex smaller than that of an adhesive layer 41D, a light collectioneffect of the microlens is high. Therefore, the sensitivity of the imagepickup apparatus 10D is higher than that of the image pickup apparatus10C. Such a cavity structure can be also realized by forming recessedportions at positions corresponding to the light receiving sections ofthe image pickup chips 30 on the glass wafer 20W.

Note that diversified production is realized by causing the image pickupapparatus 10D having the cavity 38 and the image pickup apparatus 10Cnot having the cavity 38 to mixedly exist on one joined wafer 40WD.

<Modification 5>

As shown in FIG. 11A, in the method for producing the image pickupapparatus 10E of Modification 5, when the image pickup apparatus 10C isproduced, a frame-like groove 26 is formed by, for example, a dicingblade in outer peripheral portions around the respective image pickupchip arrangement regions 30S of a glass wafer 20WE before the bondingprocess. The groove 26 may be formed by etching. At the same time, thefirst alignment marks 21 and the like may be formed.

As shown in FIGS. 11B and 11C, the image pickup chips 30 are heated andpressurized in an aligned state and bonded to the glass wafer 20WE byusing, for example, a flip chip bonder. In the image pickup apparatus10E, an excess amount of the adhesive 41L flows into the groove 26.Therefore, a fillet is not spread horizontally (a main face paralleldirection) or vertically (a main face perpendicular direction). Sincethe fillet is not spread horizontally, a lot of image pickup apparatuses10E can be fabricated from a single joined wafer 40WE by reducing thearrangement length L between the image pickup chips 30.

Also, as shown in FIGS. 11D to 11F, since the fillet of the adhesive 41Ldoes not spread vertically, the sealing member 42 is surely filled up tothe outer peripheral portions of the image pickup chip 30 in the sealingmember filling process in the image pickup apparatus 10E. Since a resinhaving a higher sealing effect than that of the adhesive layer 41 can beused for the sealing member 42, reliability of the image pickupapparatus 10E is higher than that of the image pickup apparatus 10 whichhas a possibility that the adhesive layer 41 is exposed on an outer facedue to a fillet creeping up.

Note that it is preferable to form the frame-like groove 26 so thatinner-side plan view dimensions thereof are smaller than plan viewdimensions of the image pickup chip 30. This is because the sealingmember 42 covers the outer peripheral portions of the first main faces30SA of the image pickup chips 30 when the sealing member 42 is filled,and adhesion and sealing effects are improved by an anchor effect.

It is also preferable to curve a bottom surface of a bottom portion ofthe groove 26 using a shape of the dicing blade as shown in FIG. 11A.This is because, if the bottom portion of the groove 26 is rectangular,voids occur between the adhesive 41L flown in and corners of the groove26, and reliability may be reduced.

It is also preferable that a thermal expansion coefficient of thesealing member 42 existing on an upper side inside the groove 26 besmaller than a thermal expansion coefficient of the adhesive layer 41existing on a lower side. This corresponds to a fact that a thermalexpansion coefficient of the image pickup chips 30 made of silicon andforming an upper-side wall face of the groove 26 is smaller than that ofthe cover glass 20 made of glass and forming a lower-side wall face ofthe groove 26. That is, by causing a magnitude relationship betweenthermal expansion coefficients of glass and silicon to be the same as amagnitude relationship between the thermal expansion coefficients of theadhesive layer 41 and the sealing member 42, it becomes difficult forthe adhesive layer 41 and the sealing member 42 to come off from thegroove 26 even if transformation due to thermal expansion Occurs.

Note that, if the groove 26 of the glass wafer 20WE is formed by adicing blade, linear cutting scars are left on the wall face of thegroove 26. The cutting scars have an effect of diffusing light andreducing reflection. Therefore, even if a side face of the cover glass20 is close to the light receiving sections 31, a flare does not easilyoccur.

<Modification 6>

As shown in FIG. 12A, in the method for producing the image pickupapparatus 10F of Modification 6, the second main faces 30SB of theplurality of image pickup chips 30 are bonded to a temporary supportsubstrate 20WT, which is a second support substrate, via an adhesive41LF for temporary bonding. The temporary support substrate 20WT may bemade of the same glass as that of the glass wafer 20W but does not needto be transparent. The adhesive 41LF is a temporary adhesive in whichthe adhesive strength is weakened by heat, ultraviolet rays, warm water,a solvent or the like.

Alignment marks for positioning with the image pickup chips 30 andalignment marks for positioning with the glass wafer 20W are formed onthe temporary support substrate 20WT. Note that it is also possible toform marks for positioning on a back face of the temporary supportsubstrate 20WT and perform positioning with the image pickup chips 30using the marks.

In a case of performing positioning of the image pickup chips 30 byrecognizing the alignment marks formed on the temporary supportsubstrate 20WT through the adhesive layer 41LF, it is preferable thatthe adhesive layer 41F be highly transparent. As for illumination, it iseasy to recognize an image by using ring illumination makes.

As shown in FIG. 12B, the first main faces 30SA of the plurality ofimage pickup chips 30 bonded to the temporary support substrate 20WT arecollectively bonded to the glass wafer 20W via the adhesive 41L. Thatis, positioning and bonding of the temporary support substrate 20WT andthe glass wafer 20W is performed with the use of a wafer aligner and awafer bonder.

In a case where it takes much time for the adhesive 41L to cure, if theimage pickup chips 30 are bonded one by one, it requires a long timeperiod to bond all the image pickup chips 30. In the method forproducing the image pickup apparatus 10F of Modification 6, however, itis possible to shorten the time period, and productivity is high.

Furthermore, when the image pickup chips 30 are thermal-cured and bondedon the adhesive 41L applied on a whole surface of the glass wafer 20Wone by one, it may happen that even the adhesive 41L of adjoining imagepickup chip arrangement regions 30S also cure, and adjoining chipscannot be bonded. In the method for producing the image pickup apparatus10F of Modification 6, however, such a problem does not occur.

Furthermore, since the plurality of image pickup chips 30 aresimultaneously pressed onto the glass wafer 20W by the temporary supportsubstrate 20WT, inclination of main faces of the bonded image pickupchips 30 relative to a main face of the glass wafer 20W can be uniform.

As shown in FIG. 12C, spaces among the image pickup chips 30 are sealedwith the sealing member 42. That is, a space between the temporarysupport substrate 20WT and the glass wafer 20W is filled with thesealing resin 42L.

The filling of the sealing resin 42L may be performed after separatingthe temporary support substrate 20WT. By performing the filling beforeseparating the temporary support substrate 20WT, however, it does nothappen that the sealing member 42 protrudes on the second main faces30SB of the image pickup chips 30, and it is easy to perform asubsequent polishing process because the second main faces 30SB of theimage pickup chips 30 and a surface of the sealing member 42 areflattened without unevenness.

As for filling the sealing resin 42L, openings on a side face of ajoined wafer 40WF excluding one opening are covered. Then, bydecompressing the space to be filled with the sealing member 42 andreleasing pressure in a state that the openings on the side face aresoaked in the sealing resin 42L stored in a container, the sealing resin42L is absorbed.

Note that it is also possible to apply the adhesive 41L thick on theglass wafer 20W so that the spaces among the image pickup chips 30 arefilled with the adhesive 41L applied thick when the image pickup chips30 are bonded. That is, in this case, the adhesive 41L has a function ofthe sealing resin 42L also.

As shown in FIG. 12D, by separating the temporary support substrate20WT, the joined wafer 40W is fabricated. A subsequent process issimilar to that of FIG. 6D etc. already described.

Since the methods for producing the image pickup apparatus of the aboveembodiment and modifications make it possible to produce an ultra-smalland highly reliable image pickup apparatus, the methods can be usedparticularly as a method for producing an image pickup apparatusdisposed at a distal end portion of an electronic endoscope or in acapsule endoscope.

The present invention is not limited to the aforementioned embodiments,and various changes, modifications etc. can be made therein withoutdeparting from the scope of the present invention.

What is claimed is:
 1. A method for producing an image pickup apparatus,the method comprising: a process of cutting an image pickup chipsubstrate where a plurality of light receiving sections are formed on afirst main face and electrode pads are formed around each of the lightreceiving sections to fabricate a plurality of image pickup chips; aprocess of bonding the first main face of each of the image pickup chipsdetermined as non-defective products to a transparent support substratedifferent from the image pickup chip substrate in at least either sizeor shape via a transparent adhesive layer to fabricate a joined wafer; aprocess of filling a sealing member among the plurality of image pickupchips bonded to the joined wafer; a machining process comprising aprocess of machining the joined wafer to thin a thickness of the joinedwafer, from a second main face side to flatten a machining surface and aprocess of forming through-hole interconnections, each of which isconnected to each of the electrode pads; a process of forming aplurality of external connection electrodes, each of which is connectedto each of the electrode pads via each of the through-holeinterconnections, on the second main face; and a process of cutting andindividualizing the joined wafer.
 2. A method for producing asemiconductor apparatus, the method comprising: a process of cutting asemiconductor chip substrate where a plurality of semiconductor circuitsections are formed on a first main face and electrode pads are formedaround each of the semiconductor circuit sections to fabricate aplurality of semiconductor chips; a process of bonding the first mainface of each of the semiconductor chips to a support substrate via anadhesive layer to fabricate a joined wafer; a process of filling asealing member among the plurality of semiconductor chips bonded to thejoined wafer; a process of machining the joined wafer from a second mainface side; and a process of cutting the joined wafer.
 3. The method forproducing a semiconductor apparatus according to claim 2, whereinsemiconductor chips determined as non-defective products in aninspection are bonded to the support substrate.
 4. The method forproducing a semiconductor apparatus according to claim 3, wherein themachining process comprises a process of machining the joined wafer tothin a thickness of the joined wafer to flatten a machining surface anda process of forming a plurality of external connection electrodes, eachof which is connected to each of the electrode pads, on the second mainsurface.
 5. The method for producing a semiconductor apparatus accordingto claim 4, wherein the machining process comprises a process of formingthrough-hole interconnections, each of which connects each of theelectrode pads and each of the external connection electrodes before theprocess of forming the external connection electrodes.
 6. The method forproducing a semiconductor apparatus according to claim 5, wherein thesupport substrate and the semiconductor chip substrate are differentfrom each other in at least either size or shape.
 7. The method forproducing a semiconductor apparatus according to claim 5, wherein theplurality of semiconductor chips include a plurality of semiconductorchips that are different in at least either plan view dimensions orthickness.
 8. The method for producing a semiconductor apparatusaccording to claim 5, wherein the plurality of semiconductor chips inwhich the second main face is bonded to the second support substrate arecollectively bonded to the first support substrate in the bondingprocess.
 9. The method for producing a semiconductor apparatus accordingto claim 5, comprising a process of forming a groove on the supportsubstrate along a dicing line at a time of cutting the joined waferbefore bonding the semiconductor circuit sections.
 10. The method forproducing a semiconductor apparatus according to claim 5, comprising aprocess of patterning the adhesive layer, wherein the semiconductorchips are bonded to the support substrate via the patterned adhesivelayer.
 11. The method for producing a semiconductor apparatus accordingto claim wherein the semiconductor circuit sections are light receivingsections of a solid-state image pickup device; and the support substrateand the adhesive layer are transparent.